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RQ1A070ZP
Data Sheet
10
50
Ta=25°C
10000
Ta=25 ℃
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
40
30
I D = -7.0A
Pulsed
1000
td(off)
tf
V DD = -6V
V GS = -4.5V
R G =10 ?
Pulsed
I D = -3.5A
20
0.1
V GS =0V
10
100
tr
0.01
Pulsed
0
10
td(on)
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I D [A]
Fig.12 Switching Characteristics
5
Ta=25 ℃
100000
T a=25 ℃
V DD = -6V
4 I D = -7A
R G =10 ?
Pulsed
3
2
10000
1000
Ciss
f=1MHz
V GS =0V
Crss
1
Coss
0
100
0
10
20
30
40
50
60
70
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuits
Pulse width
V GS
I D
R L
V DS
V GS
10%
50%
90%
50%
D.U.T.
10%
10%
R G
V DD
V DS
t d(on)
90%
t r
t d(off)
90%
t f
t on
t off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V G
V GS
I D
R L
V DS
V GS
Q g
I G(Const.)
R G
D.U.T.
V DD
Q gs
Q gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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4/4
2009.08 - Rev.A
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